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2N7002 MOSFET is enclosed in the SMD SOT-23/TO-236 package and its THT version 2N7000 comes in the TO-92 package. P channel BS520P is its counterpart.. 2N7002 MOSFET Pinout, Equivalent, Specs & Datasheet. April 1, 2023 April 11, 2022 by Ankit Negi. 2N7002 is an N-channel Logic level MOSFET capable of switching 60 V.
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The BSS138 is an SMD Package Logic Level N-Channel MOSFET with low on-state resistance (3.5Ω) and low input capacitance (40 pF). Adding to this the Mosfet can also switching at high speed of 20ns. Due to the low threshold voltage and high switching speed this Mosfet is commonly used in level shifter circuits. Pin Configuration Features
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IRFZ44N Pinout. The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V. However a driver circuit is needed if the MOSFET has to be switched in completely.
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Pin Configuration Features N-Channel MOSFET with low on-state resistance Continuous Drain Current (ID) is 200mA Drain Source Voltage (VDS) is 60V On-state Resistance is <5Ω Minimum Gate threshold voltage (VGS-th) is 1V Maximum Gate threshold voltage (VGS-th) is 3V Turn ON and Turn off time is 15ns and 8ns each
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MOSFET - N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol.
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April 11, 2022 by Ankit Negi BS170 is an N-channel Enhancement MOSFET capable of switching 60 V. It has a maximum drain current rating of 500 mA (continuous) and 1200 mA (pulsed), Drain to Source resistance of 1.2 ohms (typical), and maximum power dissipation rating of 830 mW.
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Support & training TI E2E™ forums with technical support from TI engineers Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use. TI's CSD18540Q5B is a 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm. Find parameters, ordering and quality information
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N-Channel MOSFET G S ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2300DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 30 V Gate-source voltage VGS ± 12 Continuous drain current (TJ = 150 °C) TC = 25 °C ID 3.6 a A TC = 70 °C 3 TA = 25 °C 3.
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MOSFET - Power, Single P-Channel, SOT-23-50 V, 10 BSS84L, BVSS84L, SBSS84L • SOT−23 Surface Mount Package Saves Board Space • BV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
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BSS138. These N−Channel enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current.
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How to use 2N7000: A Mosfet has three terminals - Drain, source and Gate. Current always flows in through the Drain and flows out through the Source. The Gate pin acts as a switch for turning ON or OFF the mosfet. If the gate is connected to Ground then the mosfet is off that is there will be no connection between Drain and source (Open).
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3-PowerSMD, Flat Leads 3-SMD, Flat Lead 3-SMD, Flat Leads 3-SMD, No Lead 3-SMD, Non-Standard 3-SMD, SOT-23-3 Variant 3-UDFN 3-UFDFN 3-XDFN Exposed Pad 3-XDFN 3-XFDFN 3-XFLGA.. MOSFET (Metal Oxide) 50 V: 180mA (Ta) 10V: 7.5Ohm @ 100mA, 10V: 2.1V @ 250µA: 0.35 nC @ 5 V: ±20V: 36 pF @ 25 V-350mW (Ta), 1.14W (Tc)-55°C ~ 150°C (TJ) Automotive.
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30 V, 2.1 A. These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards.